I just finished a fun little project, a test board for a "class E/F_odd" transmitter using EPC2037 Gallium Nitride active devices. My longer-term goal is to experiment with polar modulation as discussed in this thread:
https://www.eevblog.com/forum/projects/smps-design-questions-for-rf-amp-eer-kahn-technique/but the immediate objective was to verify the SPICE simulations and practice soldering the bare-die GaN FET packages.
(See
http://k6jca.blogspot.com/2011/01/80-meter-class-ef-rf-amplifier.html and his preceding blog entries for a discussion of the class E/F_odd topology, with references at the end of the page.)
Schematic:
I laid out a four-layer board and ordered from OSH Park. Here is the assembled PCB with a 50-ohm dummy load at the output; the size is only about 10 cm^2:
I guesstimated the air coil size and number of turns from an online calculator. It is a quasi bifilar winding in an effort to keep the coupling coefficient as high as possible. But I must have been pretty far off, because the best operating frequency was 10.8 MHz, not the intended 13.56 MHz. Not a big deal for the purposes of this experiment.
The GaN FETs are ridiculously small, 0.9 x 0.9 mm with 0.4 mm ball pitch (2x2). I burned through some parts during the learning curve, but at $1.50 each, that was not so painful. The winning formula was a *thin* layer of tacky flux (Chip Quik SMD291NL), several minutes on the hot plate to equalize temperatures at ~ 150 C, then 260 C hot air at very close range for much longer than I thought advisable. I think my problem was failing to use thermal reliefs on the pads; the copper planes were sucking heat out as fast as I could apply it. One of the FETs looks good but the other is badly tilted, although the board seems to work.
Close-up of the GaN FETs and "gate drivers" (single UHS logic gates). The FETs are about as wide as the blue-colored 0603 passives:
I ran the drain supply all the way up to 15V, with 0.96A DC input current, yielding 14W RF output. Not bad for active devices barely visible to the naked eye, and no heat sink! (EPC says R(ja) ~ 100C/W.) I wish I had better efficiency numbers, but I was measuring rms load voltage with my Rigol scope, which isn't terribly accurate: I was calculating drain efficiency ~ 96% or even higher, awesome... until I started getting some "over unity" efficiencies at low power
Oops.
Odd-order harmonic output seems to match the LTSpice simulation, but there was a second-harmonic component roughly equal in amplitude to the third harmonic. I am guessing this points to the need for a phase delay/advance mechanism between the FET drive signals because the FETs don't have identical characteristics. Or maybe it's due to imbalance in my coil winding?
The next step is to dig into the FPGA side of the project, to see how I can generate a phase-modulated carrier square wave. I expect to try something like the delay lines used in TDCs (time to digital converters), as the phase-modulation task is essentially a "digital to time" converter.