Hi, quick question:
Installing an NPN BJT "backwards" with the collector at a lower potential, such as circuit ground, and the emitter at higher potential, such as to circuit supply through a resistor, would permanently damage the transistor, right?
My thinking is since the emitter is specified to pass current (or rather the whole device is constructed to) in one direction only, connecting it to a circuit "backwards" would damage it. Is this correct?