I think this might work. Ask it to start with a verilog module for the datashseet, which it looks like it got right this time.
Now for the Flash chip and then the memory decode module.
User approved Claude's plan
⎿ Plan saved to: ~/.claude/plans/stateful-whistling-swan.md · /plan to edit
Plan: Create AS6C8016 Memory Module
Summary
Create mem/as6c8016.sv - a 512K x 16 bit SRAM simulation model based on the existing mem/as6c4008.sv structure and the AS6C8016 datasheet.
Key Differences from AS6C4008
| Feature | AS6C4008 | AS6C8016 |
|--------------|------------------|-------------------|
| Organization | 512K x 8 | 512K x 16 |
| Data bus | 8-bit (DQ0-DQ7) | 16-bit (DQ0-DQ15) |
| Address | A0-A18 (19 bits) | A0-A18 (19 bits) |
| Byte control | None | LB#, UB# |
AS6C8016 Truth Table (from datasheet)
| Mode | CE# | OE# | WE# | LB# | UB# | DQ0-7 | DQ8-15 |
|-----------------|-----|-----|-----|-----|-----|-------|--------|
| Standby | H | X | X | X | X | Hi-Z | Hi-Z |
| Output Disable | L | H | H | X | X | Hi-Z | Hi-Z |
| Read Low Byte | L | L | H | L | H | DOUT | Hi-Z |
| Read High Byte | L | L | H | H | L | Hi-Z | DOUT |
| Read Both | L | L | H | L | L | DOUT | DOUT |
| Write Low Byte | L | X | L | L | H | DIN | Hi-Z |
| Write High Byte | L | X | L | H | L | Hi-Z | DIN |
| Write Both | L | X | L | L | L | DIN | DIN |
Implementation Steps
1. Create new file: mem/as6c8016.sv
2. Module interface:
module as6c8016 #(
parameter ACCESS_TIME = 55,
parameter INIT_FILE = ""
) (
input wire [18:0] A, // Address A0-A18
inout wire [15:0] DQ, // 16-bit data I/O
input wire CEn, // Chip Enable (active low)
input wire OEn, // Output Enable (active low)
input wire WEn, // Write Enable (active low)
input wire LBn, // Lower Byte control (active low)
input wire UBn // Upper Byte control (active low)
);
3. Memory array: reg [15:0] mem [0:524287] (512K x 16 bits)
4. Read logic:
- Drive DQ[7:0] when CE#=L, OE#=L, WE#=H, LB#=L
- Drive DQ[15:8] when CE#=L, OE#=L, WE#=H, UB#=L
- Apply ACCESS_TIME delay
5. Write logic:
- Write DQ[7:0] to mem[A][7:0] when CE#=L, WE#=L, LB#=L
- Write DQ[15:8] to mem[A][15:8] when CE#=L, WE#=L, UB#=L
- Trigger on rising edge of WE# or CE#
6. Initialization: Support INIT_FILE parameter for hex loading
Files to Create
- mem/as6c8016.sv - New 512Kx16 SRAM model