Does anyone have more experience with MRAM magnetic field immunity testing? How resistant are these devices to external magnetic fields, particularly from strong magnets in close proximity? Any guidance on data retention test scenarios and qualification processes would be helpful, such as endurance for read/write cycles, data retention under no-power conditions , stress in extreme conditions (high/low temperatures, voltage spikes, etc.). I'm particularly looking for reference results and descriptions of test processes. this particular memory is part of a chipset where reliable data storage in industrial control systems where unexpected power interruptions can occur..