20 nC with 200 mA drive current means the switching times will be around 100 ns. The power dissipation is roughly equal to 0.5 x Vin x Id x (Trise + Tfall) x (switching frequency).
Hmm -- I'm afraid I don't understand how to reconcile these figures with the TPS40200 datasheet (
https://www.ti.com/lit/ds/symlink/tps40200.pdf). Can you point out what I'm misunderstanding?
On page 21 it says the gate current is I_G = Q_G × f_S. My switching frequency is configured at 290 kHz. At Q_G = 62nC, that's only 18mA, which is well within the abilities of the gate driver.
On the same page, equation 10 gives the turn-on time t_CHON = (Q_GD * R_G) / (VIN - VTH), t_CHOFF is the same but with VIN as the denominator.
The Q_GD is 16.8nC, I have chosen R_G of 10 ohm (the TPS40200 does not specify any internal R_G), VIN is 36V, VTH is 1.7V; that gives an improbably fast switching time t_CHON of 4.67ns. The FET datasheet, however, says the turn-on rise time t_r is 18ns. t_f is quoted as 35ns.
P_SW = 1/2 f_s * VIN * I_pk * t_CHON + 1/2 f_s * VIN * I_pk * t_CHOFF.
With peak current I_pk of 15A, and taking the slower t_r / t_f values from the datasheet (18 & 35ns), that gives a super-manageable 4.135W.
That said... Equation 4 from an article I found, "MOSFET power losses and how they affect power-supply efficiency" (
https://www.ti.com/lit/an/slyt664/slyt664.pdf) gives a different formula for P_SW. It relies on one figure from the datasheet parametric table (Q_GD) and requires inferring another (Q_GS2) from one of the graphs (I make it ~4.3nC).
P_SW = V_DS * I_OUT * f_s * (Q_GS2 + Q_GD)/I_G
If you take V_DS as the full VIN (36V to GND), and assuming the full 200mA sink from the gate driver, this gives P_SW = 16.5W, which is more in line with the figure you were warning about.
But the source is at 36V (VIN) and the drain is connected via the inductor to the load. (This is a high-side P-MOSFET.) Assuming the regulator is doing its thing, the load is at 30V. So... what voltage do we use at the drain?
* If the drain is at 30V, then V_DS is 6V (ignoring the inductor DCR for the moment), that's 2.74W -- which is much closer to the calculation from the datasheet equation.
* If the FET is completely off, then the drain is at 0V (the inductor having snapped negative and the freewheeling diode keeping it essentially grounded)
* If the FET is completely on, then the drain is at V_IN - r_ds(on) * I_load = 36 - 0.008 * 15 = 35.88V.
Assuming CCM, the inductor is essentially a short, and the average drain voltage should be the regulated load voltage (30V), so thus we use that (V_DS = 6V), right?