Very nice, well done
![ThumbsUp :-+](https://www.eevblog.com/forum/Smileys/default/icon_smile_thumbsup.gif.pagespeed.ce._JElyJQqdB.gif)
Wish we could attend the ISSCC, always looked forward to this conference and attended for a few decades, but now retired and no real business case to justify such
![Undecided :-\](https://www.eevblog.com/forum/Smileys/default/undecided.gif.pagespeed.ce.cCZ6w-jWpR.gif)
Of course if somewhat wanted to send us, then we would reconsider
![Wink ;)](https://www.eevblog.com/forum/Smileys/default/xwink.gif.pagespeed.ic.cldandycH0.png)
BTW the different metal patterns are likely to help keep the planarity within the inductor structures just like the "fill" is for elsewhere. We did similar techniques within the IBM SiGe BICMOS (7, 8 & 9HP) as early developers since any metallization under the inductors reduces the "Q" due to induced fields within the metal structures, so it's basically how little inductor fill you can get away with!! We had various experimental structures with different metallization patterns under the inductors that was segmented to "break" the current paths to reduce loss, but still maintain planarity.
Anyway, sounds like an interesting topic for your tutorial, and thanks for the excellent video!!
Tell Prof Rabeiz Mike Wyatt said hi
![Azn ^-^](https://www.eevblog.com/forum/Smileys/default/azn.gif.pagespeed.ce.7t5xC2ZH_H.gif)
Best,