Hi,
Making a high voltage load has its challenges, because of the Safe Operating Area, SOA, of the MOSFETs in the linear region.
Bipolar transistors do not solve the problem. BJTs suffer from something called second breakdown, if operated at high voltage and low current.
Here is a concept for putting MOSFETs in series to make a high voltage load. I would use IRFP450 transistors in this circuit. I didn't have a SPICE model handy.

I have put three MOSFETs in series in each position. This technique can be used for any number greater than 2.
The main downsides to this technique:
1) The minimum input voltage to the load is increased by one gate threshold voltage for each MOSFET. As shown the minimum input voltage is about 10V.
2) The MOSFETs have to insulated from the heatsink.
The upside:
1) It really helps with the SOA problem.
I would keep each MOSFET dissipation to be under 40W.
In the example shown I have 6 MOSFETs so 240W with suitable (very large) heatsinks.
I have attached the LTspice model.
Regards,
Jay_Diddy_B