It all depends...for example on how much voltage margin you have in your switching transistor, and how well coupled is your transformer.
But I would try to get under 1 watt for a 75 watt flyback.
Great, thanks for your response, that's precisely what I wanted to hear.
Tell us more about max and min input voltage and also the output voltage. These things all matter. For example, if you were making 5V @ 15A (I hope not) then a tiny bit of parasitic inductance in series with your output rectifier will put greater demands on your primary snubber.
If you do not have a wide input range, you might be able to use a clamp winding to return much of the leakage inductance energy back to the rectified input voltage.
Here are the design parameters I am working with
Input 240VAC nom (220VAC min, 265VAC max)
Output 12VDC 7A, 84W
I have an ETD34 transformer 1.55mH with 56uH leakage inductance that I am using.
Switch MOSFET is an STD16N65M5 with 710V Vds (link to datasheet below)
Rectifier diode Vf = 0,5V
When I do my calculations I end up with a peak switch current around 1,8 A and a power loss in the snubber circuit of 8 W which isn't really feasible.

Looking at the formula for the power loss, what I have to work with is Ipeak, Vsn and switching frequence. However, the switching frequency also affects Ipeak in the opposite way, so changing switching frequence really has no impact.
Left to work with is Ipeak and Vsn. To lower Ipeak I need to increas the transformer inductance to what feels like unreasonable values.
Then what is left to work with is Vsn. What I understood from reading up on it Vsn is normally around 2-2,5 times nVout.
So I guess my questions are
1. Did I miss something?
2. Can I select Vsn and if so - How do I select it and make it become what I selected?
I can of course go for a different MOSFET with higher Vds if that makes the difference.
Thanks!
https://www.st.com/resource/en/datasheet/std16n65m5.pdf