That’s far too complicated. Use cheap TIP142 Darlingtons with an emitter resistor.
The MOSFETs are a poor choice from the outset: they’re not designed for continous DC current, lack a proper high-power package and need a high V_GS and are obsoleted.
More importantly, for a robust circuit you need a fast current limiter. The emitter resistors also act as a current limiter when a BC846 is added.
Whats complicated? I do not think that tuning a bank of opamp regulators with inner loops and outer loop with another opamp is any simpler.
Yeah, mosfets are poor choice, so thats why most if not all commercial loads are built with them today. High Vgs is a problem? Those ~4V are problem why?
No, BJTs are the problem, because of secondary breakdown. Any ideas how many BJTs you'd need to build an average 300W 150V capable load? I'd guess plenty more than with FETs.
Lack proper high power package - what the hell? Its the same TO220/TO247 for either. Whats the trouble there?
The IRF530 is useable maybe up to 50 Volt (with safety margin due to 2nd breakdown).
Therefore i have assumed less than 50 Volt for the load.
For a 150 Volt / 300 Watt load you would need 9 TO220 or 4 TO3P devices. Rth is 1.7 for TO200 and 0.8 for TO3P.
In the BJT case the load sharing can be done with simple 0.1 Ohm Resistors and a fast current limiter with a single MPSA42 BJT is trivial.
NPN have 2nd breakdown problems but these and well understood and are documented in the SOA
Modern Mosfets have similar 2nd breakdown problems but the SOA in the datasheet is of no use.
9 TO220 Mosfets with 9 opamps with protection circuit around each opamp are complicated in comparison to the battle tested 4 NPN TO3P circuit with
4 emitter resistors.
Because of gate caps you needs 9 driver transistors too, preferable NPN-PNP pairs for equal rise and fall times.
And you still have no fast current limiter to protect the mosfets in case of short circuit.
Have you done the layout yet? You will need at least 4 layers.
In addition the opamps could cause nasty local oscillations and will degrade slew rate and impulse response.
But it is true that above 200 Volt Mosfets are the only choice left.
I do not know commerical loads and can not comment, maybe they copy and paste existing higher voltage designs.