

floobydust had two OPA627 which puzzled him. He thought they could be fake parts.
The markings are very hard to reed.


Not fake part!

Now we have better pictures of the OPA627!

Of course we can´t be sure if they are recycled or scrapped parts...


Mask revisions are the same as in the "old" OPA627.


Yeah, my pictures are getting better.


As with many other Burr-Brown parts that are laser trimmed, there are non-functional squares on the edges that have been partially cut. A letter is assigned to every square. For the ISO120 (
https://www.richis-lab.de/iso01.htm) these are A to T. For the OPA541 (
https://www.richis-lab.de/Opamp02.htm) and the VFC110 (
https://www.richis-lab.de/vfc01.htm) A to H was enough. In the OPA627 squares from A to W were integrated.

One of the p-channel J-FETs at the inputs.

In the Analog Applications Journal (SLYT595) Texas Instruments shows what is meant by dielectric isolation. On the left you see an ordinary J-FET. The transistor is isolated from the substrate by the pn junction formed at the interface. The signal source is loaded with the capacitance Cgss. This is often problematic for high impedance sources. In addition, the capacitance varies with the input voltage, which creates distortion.
If one wants to reduce the parasitic capacitances of the transistors, one can insert an insulating silicon oxide layer between the transistors and the substrate. This layer reduces the capacitance Cgss and ensures that the residual capacitance remains constant regardless of the input voltage. As described with the first OPA627 (
https://www.eevblog.com/forum/projects/opamps-die-pictures/msg3317812/?topicseen#msg3317812), however, the manufacturing process is much more complex.

You can roughly guess the structure of the transistors. The yellowish areas are contacted by the gate potential. The drain and source lines have different widths above the transistors. But they both seem to contact a deeper layer through cutouts. Most likely this is the p-doped channel.
The blue area is then n-doped and represents the upper part of the gate. The yellowish areas are thus likely to be highly n-doped areas. The high n-doping is necessary to provide an ohmic contact with the metal layer and to avoid a Schottky contact. It also ensures a low resistance distribution of the gate potential. The gate line additionally contacts greenish areas at the upper and lower edges of the transistor. I assume that this is the lower gate electrode.

In the left image, the metal layer was removed (3min HF, 3min HCL, 15min HF). Now you can guess the drain and source contacts.
In the right image more silicon oxide was dissolved (25min HF). In the active area there are now almost no colored areas left. This indicates that the silicon level has been reached. The different colors arise just in the thin silicon oxide layers where light resonances occur.

It is interesting that the frame structure still appears colored. After the silicon oxide layers have been removed, the isolation regions usually remain colorless, since they are merely inverse dopants within the substrate (see
https://www.richis-lab.de/Howto_Decap_HF.htm for example). In case of the OPA627 with its dielectric isolation of the transistors, the isolation regions are deeper silicon oxide layers which have not yet been dissolved and accordingly still exhibit a slight colorfulness.


The die has suffered some damage at one edge. As described in the first OPA627 post, dielectric isolation is created by grinding a suitably prepared wafer and then bonding it to another wafer rotated by 180°. Here it seems like exactly this upper part broke off.
https://www.richis-lab.de/Opamp22.htm#OPA627x2 